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| SLA5008 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) EAS* PT N channel 100 20 4 8 (PW1ms) 15 N-channel + P-channel H-bridge (Ta=25C) External dimensions A *** SLA Ratings P channel -100 20 3 6 (PW1ms) -- Unit V V A A mJ W W C/W Vrms C C 5 (Ta=25C, with all circuits operating, without heatsink) 35 (Tc=25C,with all circuits operating, with infinite heatsink) 3.57 1000 (Between fin and lead pin, AC) 150 -40 to +150 j-c VISO Tch Tstg * : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15. sEquivalent circuit diagram 10 7 8 11 2 9 4 5 3 6 Pch 12 Nch 1 Characteristic curves ID-VDS Characteristics (Typical) N-ch 8 10V ID-VGS Characteristics (Typical) P-ch N-ch 8 -10V ---6 (VDS=10V) 40C 12 C 5 ---5 -7V 6 7V 6 5 ---4 5 ID (A) ID (A) 4 6V ---3 ID (A) -6V 4 3 3 2 VGS=5V ---2 VGS=-5V 2 1 0 1 0 ---1 0 10 20 ---0 0 ---5 ---10 ---15 ---20 0 2 4 6 TC=- 7 7 25C 8 10 VDS (V) VDS (V) VGS (V) RDS(ON)-ID Characteristics (Typical) N-ch 0.8 (VGS=10V) 1.5 P-ch (VGS=-10V) P-ch ---6 (VDS=-10V) 40C ---5 TC=- 25 12 5 C 0.6 () 1.0 ---4 () 0.4 ID (A) (ON) (ON) ---3 RDS RDS 0.5 ---2 0.2 ---1 0 0 1 2 3 4 5 6 7 8 0 0 -1 -2 -3 -4 -5 -6 ---0 0 ---2 ---4 ---6 C ---8 ---10 ID (A) ID (A) VGS (V) RDS(ON)-TC Characteristics (Typical) N-ch 1.2 ID=4A VGS=10V P-ch 2.0 ID=-3A VGS=-10V 1.0 1.5 () (ON) () 1.0 0.8 (ON) 0.6 RDS 0.4 RDS 0.5 0.2 0 --- 40 0 50 100 150 0 -40 0 50 100 150 TC (C) TC (C) 42 SLA5008 Electrical characteristics N channel Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr 2.0 1.1 1.7 0.50 180 82 40 40 1.2 250 2.0 0.60 100 500 250 4.0 Specifications typ max Unit V nA Conditions ID=250A, VGS=0V VGS=20V VDS=100V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD 50V, VGS=-10V, see Fig. 3 on page 16. ISD=4A ISD=100mA -2.0 0.7 1.1 1.1 180 85 90 80 -4.0 250 -5.5 1.3 Specifications min -100 500 -250 -4.0 typ max P channel Unit V nA Conditions ID=-250A, VGS=0V VGS= 20V VDS=-100V, VGS=0V VDS=-10V, ID=-250A VDS=-10V, ID=-3A VGS=-10V, ID=-3A VDS=-25V, f=1.0MHz, VGS=0V ID=-3A, VDD -50V, VGS=-10V, see Fig. 4 on page 16. ISD=-3A ISD= 100mA (Ta=25C) A V S pF pF ns ns V ns A V S pF pF ns ns V ns Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 5 Safe Operating Area (SOA) P-ch (VDS=-10V) (VDS=10V) N-ch 10 ID (pulse) max 5 (TC=25C) 10 0 5 1m ED s 10 s IT m M s Re (yfs) (S) ID (A) 1 1 1 25C 0.5 0.5 0.5 0.2 0.05 0.1 0.5 1 5 8 0.2 -0.05 -0.1 -0.5 -1 -6 0.1 0.5 RD TC =- Re (yfs) (S) N) 40 C 12 5 C C 40 =- C TC 25 C 5 12 LI (1 sh (O ot S ) 1 5 10 50 100 ID (A) ID (A) VDS (V) Capacitance-VDS Characteristics (Typical) N-ch 600 VGS=0V f=1MHz P-ch 700 500 VGS=0V f=1MHz P-ch ---10 ID (pulse) max (TC=25C) 10 0 s ---5 Ciss 1m Ciss 10 s Capacitance (pF) D m IT E s Capacitance (pF) (1 M sh ID (A) Coss 50 ---1 50 ---0.5 Crss Crss 10 5 0 10 20 30 40 50 10 5 0 ---10 ---20 ---30 ---40 ---50 ---0.1 ---0.5 ---1 RD S Coss (O 100 N) 100 LI ot ) ---5 ---10 ---50 ---100 VDS (V) VDS (V) VDS (V) IDR-VSD Characteristics (Typical) N-ch 8 7 6 5 PT-Ta Characteristics P-ch 40 35 With Silicone Grease Natural Cooling All Circuits Operating ---6 ---5 30 ---4 IDR (A) IDR (A) PT (W) 25 20 15 W ith fin In 4 3 ---3 0V ite H ea ts in k ---2 2 0V S= -1 -5 10V 5V V S= 10 0V V G 1 0 ---1 5 0 Without Heatsink VG ---0 0 0.5 1.0 1.5 0 ---1 ---2 ---3 ---4 0 50 100 150 VSD (V) VSD (V) Ta (C) 43 |
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